TMRC 2025
Sendai, Japan
28th-30th July, 2025
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Invited Speaker Program
Monday 28th July, am: Heat assisted magnetic recording (HAMR)
Monday 28th July, pm: Heads and media
B1 | Anisotropic spin exchange modeling and Curie temperature dispersion in L10-FePt nanoparticles for HAMR media | K. Ochiai |
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B2 | The impact of in-plane grains on HAMR performance and THMap metrics | N. Natekar |
B3 | Phase-field study of microstructure formation of FePt-C nanogranular film for heat-assisted magnetic recording media | Y. Matsuoka |
B4 | Domain-wall induced noise reduction in an exchange-coupled HAMR multilayer media model | L. Xu |
B5 | Determination of coupling state in a dual-FGL STO using injection locking | Y. Nakagawa |
B6 | Near field transducer reliability improvements due to media stack | M. A. Bashir |
B7 | An ionic liquid (IL)-based media lube for hard disc drives (HDDs) | L. Li |
Tueday 29th July, am: Advanced systems, sensors, and alternative storage
Tuesday 29th July, pm: Neuromorphic computing, devices for AI
D1 | Probabilistic and analog spintronic devices for energy-efficient AI hardware | S. Fukami |
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D2 | Scalable and energy-efficient on-device SNNs enabled by magnetic tunnel junctions | S. Li |
D3 | Self-regulated spintronic long short-term memory for spiking neural networks | C-H. Lai |
D4 | A magnetic Hopfield neural network capable of self-learning | W. Yu |
D5 | Spintronic foundation cells for large-scale integration | Q. Shao |
D6 | Toward all-electric non-volatile intelligence in spintronic reservoir | Z. Jing |
D7 | Noise-aware training of dynamical physical neural networks of spintronic nanodevices | M. O. A. Ellis |
Wednesday 30th July, am: Spintronics I - STT MRAM, new switching mechanisms
E1 | Advanced magnetic tunnel junctions for voltage-controlled MRAM | S. Yuasa |
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E2 | Demonstration of reliable memory operation in the world’s smallest 1 Selector-1 MTJ cell | K. Sugiura |
E3 | TEL PVD technology for spintronic devices | C-M. Park |
E4 | Magnetic ordered alloy based free layer materials for high-speed writing of MRAM devices with high retention | M. Gottwald |
E5 | Voltage control of interfacial antiferromagnetic spins based on magnetoelectric effect | Y. Shiratsuchi |
E6 | Nanoelectromechanical spin memory: a scalable and energy-efficient hybrid for next-generation nonvolatile storage | J. Hong |
E7 | Strain control of spintronic devices | V. Lomakin |